HiSIM: Hiroshima-University STARC IGFET Model
HiSIM refers to a family of compact models for integrated devices with a MOSFET core. The HiSIM models are based on a complete surface potential description.
What's New
- 2023/12/22 HiSIM_HV 2.5.1 was released to the public. Available from "HiSIM-Model Downloads" on the left.
- 2023/12/22 HiSIM_HV 2.4.3 was released to the public. Available from "HiSIM-Model Downloads" on the left.
- 2023/12/22 HiSIM_HV 2.3.4 was released to the public. Available from "HiSIM-Model Downloads" on the left.
- 2023/05/29 Started: 2023 International Symposium on Devices, Circuits and Systems (ISDCS 2023)
- 2023/05/16 HiSIM_SOTB 1.3.0 was released to the public. Available from "HiSIM-Model Downloads" on the left.
- 2023/05/08 HiSIM_SOI 1.5.0 was released to the public. Available from "HiSIM-Model Downloads" on the left.
- 2023/04/08 HiSIM2 3.2.0 was released to the public. Available from "HiSIM-Model Downloads" on the left menu.
Overview of the HiSIM Compact Model Family 
Four members of the HiSIM family have been selected as international industry standards by the Compact Model Coalition (CMC).
HiSIM_HV (1st standard-version release in January 2009) : High-Voltage MOS-Device Model Standard
HiSIM2 (1st standard-version release in April 2011) : 2nd Generation MOSFET Model Standard
HiSIM_HV (1st standard-version release in January 2009) : High-Voltage MOS-Device Model Standard
HiSIM2 (1st standard-version release in April 2011) : 2nd Generation MOSFET Model Standard
HiSIM_SOI (1st standard-version release in July 2012) : Surface-Potential SOI-MOSFET Model Standard
HiSIM_SOTB (1st standard-version release in December 2014) : Surface-Potential-Based Model Standard for SOI-MOSFET with Thin Silicon and BOX Layers as well as Multi-Gate MOSFETs
・NGSPICE (Open Source Circuit Simulator with HiSIM_HV 1.2.4/2.2.0 and HiSIM2 2.8.0 implemented)
Publication
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Authors: Mitiko Miura-Mattausch, Hans Jürgen Mattausch, Tatsuya Ezaki Title: "The Physics and Modeling of MOSFETS: Surface-Potential and Modeling HiSIM" Publisher: World Scientific Pub Co Inc. (2008)
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